डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF9Z34N | Power MOSFET PD - 9.1485B
IRF9Z34N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -55V
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International Rectifier |
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IRF9Z34N | P-Channel MOSFET isc P-Channel MOSFET Transistor
IRF9Z34N,IIRF9Z34N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic |
INCHANGE |
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IRF9Z34NL | Power MOSFET PD - 9.1525
IRF9Z34NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Av |
International Rectifier |
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IRF9Z34NL | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤100mΩ(@VGS= -10V; ID= -10A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variati |
INCHANGE |
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IRF9Z34NLPBF | MOSFET www.DataSheet4U.com
PD- 95769
IRF9Z34NSPbF IRF9Z34NLPbF
Lead-Free
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1
04/25/05
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IRF9Z34NS/LPbF
2
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IRF9Z34NS/LPbF
www.irf.com
3
www.D |
International Rectifier |
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IRF9Z34NS | Power MOSFET PD - 9.1525
IRF9Z34NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Av |
International Rectifier |
|
IRF9Z34NS | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤100mΩ(@VGS= -10V; ID= -10A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variati |
INCHANGE |
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