IRF9Z34 डाटा शीट PDF( Datasheet )

www.vishay.com IRF9Z34 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -60 VGS = -10 V 34 9.9 16 Si

PD - 9.913A IRF9Z34S/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Av

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) - 60 VGS = - 10 V 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single 0.14 I2P

PD- 95767 IRF9Z34SPbF IRF9Z34LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 06/07/05 IRF9Z34S/LPbF 2 www.irf.com IRF9Z34S/LPbF www.irf.com 3 IRF9Z34S/LPbF 4 www.irf.com IRF9Z34S/LPbF www.irf

PD - 9.1485B IRF9Z34N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V

isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic