डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF9952 | Power MOSFET PD - 9.1561A
PRELIMINARY
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IRF9952
HEXFET® Power MOSFET
D1 D1 D2 D2
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Los |
International Rectifier |
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IRF9952PBF | HEXFET Power MOSFET PD - 95135
IRF9952PbF
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Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free
HEXFET |
International Rectifier |
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IRF9952QPBF | Power MOSFET PD - 96115
IRF9952QPbF
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Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qua |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |