IRF9610 डाटा शीट PDF( Datasheet )

www.vishay.com IRF9610 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -200 VGS = -10 V 3.0 11

200V/1.75A P-Channel Power MOSFET (Discontinued) IRF9610 SAMSUNG General Description  Low on resistance  Improved inductive ruggedness  Fast switching time  Rugged polysilicon gate cell structure

www.vishay.com IRF9610S, SiHF9610S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 200 VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) Qgd (nC) 7 4 Configuration Single D2PAK (TO-263)