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IRF9540 | P-Channel Power MOSFET IRF9540, RF1S9540SM
Data Sheet July 1999 File Number
2282.6
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced po |
Intersil Corporation |
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IRF9540 | Power MOSFET |
International Rectifier |
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IRF9540 | P-Channel MOSFET Semiconductor
July 1998
IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM
-15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs
Features
Description
• -15A and -19A, -80V and -1 |
Harris Corporation |
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IRF9540 | P-Channel Power MOSFETs www.DataSheet4U.com
IRF9540, RF1S9540SM
Data Sheet January 2002
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanc |
Fairchild Semiconductor |
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IRF9540 | Power MOSFET www.vishay.com
IRF9540
Vishay Siliconix
Power MOSFET
TO-220AB
S G
S D G
D P-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
-100 VGS = -10 V
61 14 29 Si |
Vishay |
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IRF9540N | Power MOSFET PD - 91437B
IRF9540N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
D
VDSS = -100V RDS(on) = 0 |
International Rectifier |
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IRF9540N | P-Channel MOSFET isc P-Channel MOSFET Transistor
IRF9540N,IIRF9540N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.117Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev |
INCHANGE |
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