डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF9130 | P-Channel Power MOSFET |
Samsung semiconductor |
|
IRF9130 | P-Channel Power MOSFET IRF9130
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
P–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
1
11.18 (0.440) 10.67 (0. |
Seme LAB |
|
IRF9130 | P-Channel Power MOSFET IRF9130
Data Sheet February 1999 File Number
2220.3
-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSF |
Intersil Corporation |
|
IRF9130 | P-Channel Power MOSFET REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA)
Product Summary
Part Number
BVDSS
IRF9130
-100V
RDS(on)
ID -11A
PD- 90549E
IRF9130 JANTX2N6804 JANTXV2N68064 |
International Rectifier |
|
IRF9130SMD | P-Channel Power MOSFET IRF9130SMD
MECHANICAL DATA Dimensions in mm (inches)
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
3 .6 0 (0 .1 4 |
Seme LAB |
www.DataSheet.in | 2017 | संपर्क |