डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF840LCS | Power MOSFET PD- 93766
IRF840LCS IRF840LCL
HEXFET® Power MOSFET
l l l l l l
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetit |
International Rectifier |
|
IRF840LCS | Power MOSFET IRF840LCS/LCL
Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
D
N Channel
G Symbol S
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drai |
TRANSYS |
|
IRF840LCS | Power MOSFET IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
500 VGS = 10 V
39
Qgs (nC)
10
Qgd (nC)
19
Configuration
Single
0.85
I2P |
Vishay |
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