IRF840LC डाटा शीट PDF( Datasheet )

www.vishay.com IRF840LC Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 39 10 19 Sing

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF840LC ·FEATURES ·With low gate drive requirements ·Ultra low gate charge ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot

PD- 93766 IRF840LCS IRF840LCL HEXFET® Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetit

IRF840LCS/LCL Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D N Channel G Symbol S ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Drai

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 500 VGS = 10 V 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single 0.85 I2P

PD- 93766 IRF840LCS IRF840LCL HEXFET® Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetit