IRF832 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF832 DESCRIPTION ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Res

~D~~~U FIELD EFFECT POWER TRANSISTOR IRF832,833 4.0 AMPERES 500, 450 VOLTS ROS(ON) = 2.0 .0. This series of N~Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low

IRF8327SPbF l RoHS Compliant and Halogen Free  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC