IRF831 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF831 DESCRIPTION ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Res

www.DataSheet4U.com PD - 97145 IRF8313PbF Applications l l HEXFET® Power MOSFET Load Switch DC/DC Conversion VDSS RDS(on) max Qg 30V 15.5m:@VGS = 10V 6.0nC Benefits l Low Gate Charge and Low RDS(on) l F

isc N-Channel MOSFET Transistor IRF831FI DESCRIPTION ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) ·100% avalanche