IRF830A डाटा शीट PDF( Datasheet )

www.vishay.com IRF830A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 1.4 24 6.3

SEMICONDUCTOR IRF830 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4.5A, 500Volts) DESCRIPTION The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors. T

SMPS MOSFET PD- 91878D IRF830A Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching HEXFET® Power MOSFET VDSS 500V Rds(on) max ID 1.40Ω 5.0A Be

isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF830A FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lo

PD- 92006A SMPS MOSFET IRF830AS/L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching l VDSS 500V RDS(on) max 1.40Ω ID 5.0A Be

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 24 6.3 11 Single 1.40 I2PAK

PD- 94820 SMPS MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved G