IRF742 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF742 DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resis

IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40 N-Channel Power MOSFETs 10A, 350V/400V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed appli

~D~[F~lf FIELD EFFECT POWER TRANSISTOR IRF742,743 SAMPERES 400, 350 VOLTS ROS(ON) =O.SO n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on

www.DataSheet4U.com PD - 94278 IRF7420 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS -12V RDS(on) max 14mΩ@VGS = -4.5V 17.5mΩ@VGS =

l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -12V PD - 95633A IRF7420PbF HEXFET® Power MOSFET RDS(on) max 14mΩ@VGS = -4.5V 17.5mΩ@VGS = -2.5V

VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) RDS(on) max (@VGS = -1.8V) Qg (typical) ID (@TA = 25°C) -12 V 14 mΩ 17.5 mΩ 26 38 -11.5 mΩ nC A IRF7420PbF-1 S1 S2 S3 G4 HEXFET® Power MOSFE