IRF741 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF741 DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resi

IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40 N-Channel Power MOSFETs 10A, 350V/400V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed appli

www.DataSheet.in PD - 94025 IRF7410 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS -12V RDS(on) max 7mΩ@VGS = -4.5V 9mΩ@VGS = -2.5V 1

PD - 96247 IRF7410GPbF HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max 7mΩ@VGS = -4.5V 9mΩ@

l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -12V PD - 96028B IRF7410PbF HEXFET® Power MOSFET RDS(on) max 7mΩ@VGS = -4.5V 9mΩ@VGS = -2.5V 13m

VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) RDS(on) max (@VGS = -1.8V) Qg (typical) ID (@TA = 25°C) -12 V 7 9 mΩ 13 91 nC -16 A Features Industry-standard pinout SO-8 Package Compatible with E