डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF7343 | HEXFET Power MOSFET PD -91709
IRF7343
HEXFET® Power MOSFET
l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
N - C H A N N EL M O S FE T 1 8 |
International Rectifier |
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IRF7343PBF | HEXFET Power MOSFET PD - 92547
IRF7343PbF
l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
N-CHANNEL MOSFET |
International Rectifier |
|
IRF7343QPbF | Power MOSFET PD - 96110A
l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free
Description
These HEXFET |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |