IRF733 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF733 DESCRIPTION ·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resi

PD - 94225 IRF7331 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS 20V RDS(on) max (mΩ) 30@VGS = 4.5V 45@VGS = 2.5V ID 7.0A 5.6A T

PD - 95266 IRF7331PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS 20V RDS(on) max (mW) 30@VGS = 4.5V 45@VGS = 2.5V ID

VDS RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 20 V 30 mΩ 45 13 nC 7.0 A IRF7331TRPbF-1 HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8

VDS RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 20 V 30 mΩ 45 13 nC 7.0 A IRF7331TRPbF-1 HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8

PD- 94546 IRF7335D1 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output • Low Conduction Losses • Low Switching Losses