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IRF7324 | Power MOSFET PD -93799A
IRF7324
HEXFET® Power MOSFET
q q q q q q
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.1mm) Available in Tape & Reel 2.5V Rated
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2 |
International Rectifier |
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IRF7324D1 | FETKY MOSFET / Schottky Diode www.DataSheet4U.com
PD- 91789
PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint
IRF7324D1
8
FETKY™ MOSFET / Schottk |
International Rectifier |
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IRF7324D1PbF | FETKY MOSFET / Schottky Diode PD-95309A
IRF7324D1PbF
FETKYä MOSFET / Schottky Diode
l Co-packaged HEXFET® Power MOSFET and Schottky Diode
l Ideal for Mobile Phone Applications l Generation V Technology l SO-8 Footprint l Lead-Free
A1 |
International Rectifier |
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IRF7324PBF | HEXFET Power MOSFET www.DataSheet4U.com
PD - 95460
IRF7324PbF
HEXFET® Power MOSFET
Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile (<1.1mm) ● Available in Tape & Reel ● 2.5V Rated ● Lea |
International Rectifier |
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IRF7324TRPBF-1 | Power MOSFET VDS RDS(on) max
(@VGS = -4.5V)
Qg (typical) ID
(@TA = 25°C)
-20 0.018
42 -9.0
V Ω nC A
IRF7324TRPbF-1
HEXFET® Power MOSFET
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
SO-8
Features Industry-stan |
International Rectifier |
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