IRF7309 डाटा शीट PDF( Datasheet )

PD - 9.1243B PRELIMINARY IRF7309 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rat

PD - 96135A l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET

VDS RDS(on) max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 0.05 25 4.0 P-CH -30 0.10 25 -3.0 V V Ω nC A IRF7309TRPbF-1 HEXFET® Power MOSFET SO-8 Features Industry-standard pinout SO-8 Package Compati