IRF7105 डाटा शीट PDF( Datasheet )

l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from

l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fifth Generation

END OF LIFE PD - 96102B IRF7105QPbF l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) N-CH 25 0.1 9.4 3.5 P-CH -25 0.25 10 -2.3 V Ω nC A IRF7105TRPbF-1 HEXFET® Power MOSFET N-CHANNEL MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2