IRF650A डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF650A FEATURES ·Low RDS(on) = 0.073Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Are

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 2