डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF640PBF | N-Channel Type Power MOSFET IRF640PBF
®
IRF640PBF
Pb Free Plating Product
Pb
18A,200V Heatsink N-Channel Type Power MOSFET
Features
̰ RDS(on) (Max 0.18 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High |
Thinki Semiconductor |
|
IRF640PBF | Power MOSFET IRF640, SiHF640
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single
D
FEATURES
200 0.18
• Dynamic dV/dt Rating • R |
Vishay |
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