IRF624 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =1.1Ω ·3.8A and 250V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·H

IRF624B/IRFS624B November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar,

www.vishay.com IRF624 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 1.1 14 2.7

Advanced Power MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current :

IRF624B/IRFS624B November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar,

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Power MOSFET IRF624S, SiHF624S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 250 VGS = 10 V 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D2PAK (TO-263) D 1.1 GD S G S