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IRF530N | N-channel TrenchMOS transistor Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF530N
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
|
NXP |
|
IRF530N | N-Channel Power MOSFET IRF530N
TM
Data Sheet
March 2000
File Number
4843
22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Features
• Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 1 |
Intersil Corporation |
|
IRF530N | Power MOSFET PD - 91351
IRF530N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V |
International Rectifier |
|
IRF530N | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.09Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
|
IRF530N | Power MOSFET Data Sheet
January 2002
IRF530N
22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Symbol
DRAIN (FLANGE)
IRF530N
D
G S
Features
• Ultra Low On-Resistance - rDS(O |
Fairchild Semiconductor |
|
IRF530NL | HEXFET Power MOSFET PD - 91352B
IRF530NS IRF530NL
HEXFET® Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance
D
VDSS = 100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
RDS(on) |
International Rectifier |
|
IRF530NL | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
pe |
INCHANGE |
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