डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF530A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Curren |
Fairchild Semiconductor |
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IRF5305 | Power MOSFET | International Rectifier |
|
IRF530 | N-Channel MOSFET | Motorola Inc |
|
IRF530N | Power MOSFET | International Rectifier |
|
IRF530 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics |
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IRF530 | Power MOSFET | International Rectifier |
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IRF530 | N-Channel Power MOSFET | Fairchild Semiconductor |
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IRF530N | N-channel TrenchMOS transistor | NXP |
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IRF530 | N-Channel MOSFET Transistor | Inchange Semiconductor |
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IRF530A | Advanced Power MOSFET | Fairchild Semiconductor |
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IRF5305S | Power MOSFET | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |