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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF530 | N-Channel MOSFET Transistor isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
IRF530
FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variati |
Inchange Semiconductor |
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IRF530 | N-Channel MOSFET |
Motorola Inc |
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IRF530 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IRF530
N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
IRF530
100 V <0.16 Ω
14 A
s TYPICAL RDS(on) = 0.115Ω s AVALANCHE RUGGED TECHNOLOGY
s |
STMicroelectronics |
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IRF530 | Power MOSFET |
International Rectifier |
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IRF530 | N-Channel Power MOSFET Data Sheet
IRF530
February 2002
[ /Title (IRF53 0, RF1S5 30SM) /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation |
Fairchild Semiconductor |
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IRF530 | N-Channel MOSFET www.DataSheet4U.com
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Harris Corporation |
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IRF530 | Power MOSFET IRF530, SiHF530
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 26 5.5 11 Single
D
FEATURES
100 0.16
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Vishay |
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