डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF5210S | Power MOSFET PD - 91405C
IRF5210S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avala |
International Rectifier |
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IRF5210S | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variatio |
INCHANGE |
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IRF5210SPBF | Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Some Parameters are Different from
IRF5210S/L l P-Channel l L |
International Rectifier |
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IRF5210SPBF | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·P-channel ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Ultra low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |