डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF521 | N-Channel MOSFET IRF 520/FI-521/FI IRF 522/FI-523/FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
IRF520 IRF520FI
IRF521 IRF521FI
IRF522 IRF522FI
IRF523 IRF523FI
Voss
100 V 100 V
80 V 80 V
100 V 100 V
80 V 80 V
Ro |
STMicroelectronics |
|
IRF521 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FET |
Supertex Inc |
|
IRF521 | N-Channel Power MOSFET |
Fairchild Semiconductor |
|
IRF5210 | Power MOSFET PD - 91434A
IRF5210
HEXFET® Power MOSFET
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
D
|
International Rectifier |
|
IRF5210 | P-Channel MOSFET isc P-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF5210,IIRF5210
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot varia |
INCHANGE |
|
IRF5210L | Power MOSFET PD - 91405C
IRF5210S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avala |
International Rectifier |
|
IRF5210L | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variatio |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |