IRF520N डाटा शीट PDF( Datasheet )

PD - 91339A IRF520N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.20Ω ID

isc N-Channel MOSFET Transistor IRF520N，IIRF520N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.2Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot vari

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe

PD- 95749 IRF520NSPbF IRF520NLPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf

Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize ad

PD -91340A IRF520NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF520NS) Low-profile through-hole (IRF520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rat

Isc N-Channel MOSFET Transistor IRF520NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for