IRF4905S डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IRF4905S | Power MOSFET PD - 97034
IRF4905SPbF IRF4905LPbF
Features O Advanced Process Technology O Ultra Low On-Resistance O 150°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax O Some Parameters |
 International Rectifier |
|
| IRF4905S | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤20mΩ(@VGS= -10V; ID= -42A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variatio |
 INCHANGE |
|
| IRF4905SPBF | HEXFET Power MOSFET PD - 97034
IRF4905SPbF IRF4905LPbF
Features
O O O O O O
HEXFET® Power MOSFET
D
O
Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed |
International Rectifier |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |