डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF250 | N-Channel Power MOSFET |
Samsung semiconductor |
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IRF250 | N-Channel Power MOSFET IRF250
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO� |
Seme LAB |
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IRF250 | N-Channel Power MOSFET IRF250
Data Sheet March 1999 File Number
1825.3
30A, 200V, 0.085 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to wi |
Intersil Corporation |
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IRF250 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF250
DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resis |
Inchange Semiconductor |
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IRF250 | 50W to 500W HIGH POWER WIRE WOUND RESISTOR POWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IRN50-IRN150 IRF150-IRF500
Features and Applications
Non-inductive, flat shaped aluminum housed wire wound fixe |
ETC |
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IRF250 | HEXFET TRANSISTORS PD - 90338E
IRF250
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
JANTX2N6766 JANTXV2N6766
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]
200V, N-CHANNEL
Product Summary
Part Number BVDSS
IR |
International Rectifier |
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IRF250P224 | N-Channel MOSFET isc N-Channel MOSFET Transistor IRF250P224,IIRF250P224
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤12mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
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