डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF240 | N-Channel Power MOSFET |
Samsung semiconductor |
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IRF240 | N-Channel Power MOSFET IRF240
MECHANICAL DATA Dimensions in mm (inches)
40.01 (1.575) Max.
26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls.
N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS
VDSS ID(cont) RDS(on) 200V 18A 0.18W
22.23 |
Seme LAB |
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IRF240 | N-Channel Power MOSFET IRF240
Data Sheet March 1999 File Number
1584.3
18A, 200V, 0.180 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFETs designed, t |
Intersil Corporation |
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IRF240 | N-Channel Power MOSFET |
Fairchild Semiconductor |
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IRF240 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF240
DESCRIPTION ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistan |
Inchange Semiconductor |
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IRF240 | REPETITIVE AVALANCHE AND dv/dt RATED www.DataSheet4U.com
PD - 90370
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A
IRF240 200V, N-CHAN |
International Rectifier |
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IRF240SMD | N-Channel Power MOSFET LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
IRF240SMD
N–CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M a x .
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 |
Seme LAB |
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