डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF230 | N-Channel Power MOSFET |
Samsung semiconductor |
|
IRF230 | N-Channel Power MOSFET IRF230
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
N–CHANNEL ENHANCEMENT MODE HIGH V |
Seme LAB |
|
IRF230 | N-Channel Power MOSFET Semiconductor
IRF230, IRF231, IRF232, IRF233
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors |
Intersil Corporation |
|
IRF230 | N-Channel Power MOSFET |
Fairchild Semiconductor |
|
IRF230 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF230
DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistan |
Inchange Semiconductor |
|
IRF230 | N-CHANNEL TRANSISTORS REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA)
Product Summary
Part Number
BVDSS
IRF230
200V
RDS(on) 0.40
ID 9.0A
PD- 90334G
IRF230 JANTX2N6758 JANTXV2N6758
200V, N-CHA |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |