IRF130 डाटा शीट PDF( Datasheet )

IRF130 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO�

IRF130 Data Sheet March 1999 File Number 1566.4 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, te

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRF130 100V RDS(on) ID 0.18 14A PD- 90333G IRF130 JANTX2N6756 JANTXV2N6756 100V, N-CH

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF130 DESCRIPTION ·Drain Current ID=14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistan

PD - 94591 AUTOMOTIVE MOSFET IRF1302 HEXFET® Power MOSFET D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switc