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IRF1010 | N-Channel Power MOSFET SEMICONDUCTOR
IRF1010 Series
N-Channel Power MOSFET (84A, 60Volts)
D D
RoHS RoHS
Nell High Power Products
DESCRIPTION
The Nell IRF1010 is a three-terminal silicon device with current conduction capability |
nELL |
|
IRF1010E | Power MOSFET l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l Lead-Free
Description
Advanced HEXFET® Power M |
International Rectifier |
|
IRF1010E | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1010E, IIRF1010E
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
INCHANGE |
|
IRF1010EL | Power MOSFET PD - 91720
IRF1010ES IRF1010EL
l l l l l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
G
HEXFE |
International Rectifier |
|
IRF1010ELPbF | HEXFET Power MOSFET PD - 95444
Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
IRF1 |
International Rectifier |
|
IRF1010EPBF | Power MOSFET l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l Lead-Free
Description
Advanced HEXFET® Power M |
International Rectifier |
|
IRF1010ES | Power MOSFET PD - 91720
IRF1010ES IRF1010EL
l l l l l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
G
HEXFE |
International Rectifier |
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