IPW65R190E6 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IPW65R190E6 | Power Transistor MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOS™ E6 Power Transistor IPx65R190E6
Data Sheet
Rev. 2.1, 2018-02-28 Final
Industrial & Multimarket
650V CoolMOS™ E6 Power Trans |
 Infineon Technologies |
|
| IPW65R190E6 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and r |
 INCHANGE |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |