डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPW60R190E6 | E6 Power Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™E6600V
600VCoolMOS™E6PowerTransistor IPx60R190E6
DataSheet
Rev.2.3 Final
PowerManagement&Multimarket
0**L ;]]ZDEIk =0 F]eS` J`OaW |
Infineon Technologies |
|
IPW60R190E6 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW60R190E6 IIPW60R190E6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-L |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |