डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPW60R080P7 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW60R080P7 IIPW60R080P7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤80mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lo |
INCHANGE |
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IPW60R080P7 | MOSFET IPW60R080P7
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principle |
Infineon |
www.DataSheet.in | 2017 | संपर्क |