डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPW60R045CP | CoolMOS Power Transistor IPW60R045CP
CoolMOS® Power Transistor
Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for tar |
Infineon Technologies AG |
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IPW60R045CP | N-Channel MOSFET INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CP
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤45mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot |
INCHANGE |
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IPW60R045CPA | Power Transistor CoolMOS® Power Transistor
Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (Ro |
Infineon |
www.DataSheet.in | 2017 | संपर्क |