IPP65R099C6 डाटा शीट PDF( Datasheet )

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isc N-Channel MOSFET Transistor IPP65R099C6，IIPP65R099C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-t