डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP600N25N3 | Power Transistor IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summar |
Infineon |
|
IPP600N25N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPP600N25N3,IIPP600N25N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤60mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L |
INCHANGE |
|
IPP600N25N3G | Power Transistor IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summar |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |