डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP50R350CP | Power Transistor IPP50R350CP
CoolMOSTM Power Transistor
Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated
Product Summary VDS @Tjmax RDS(on),max Qg,typ
550 V 0.350 W
19 nC
• Hi |
Infineon |
|
IPP50R350CP | N-Channel MOSFET isc N-Channel MOSFET Transistor
IPP50R350CP,IIPP50R350CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.35Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |