IPP114N12N3 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IPP114N12N3 | Power-Transistor OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on)max ID
• 175 °C operating |
 Infineon |
|
| IPP114N12N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPP114N12N3，IIPP114N12N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤11.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to |
 INCHANGE |
|
| IPP114N12N3G | Power-Transistor OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on)max ID
• 175 °C operating |
Infineon |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |