डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP110N20NA | Power-Transistor IPB107N20NA IPP110N20NA
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max |
Infineon |
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IPP110N20NA | N-Channel MOSFET isc N-Channel MOSFET Transistor IPP110N20NA,IIPP110N20NA
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |