डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP076N12N3 | Power-Transistor IPI076N12N3 G IPP076N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on)m |
Infineon |
|
IPP076N12N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPP076N12N3,IIPP076N12N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤7.6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
|
IPP076N12N3G | Power-Transistor IPI076N12N3 G IPP076N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on)m |
Infineon |
www.DataSheet.in | 2017 | संपर्क |