डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP05CN10N | Power-Transistor IPB05CN10N G IPI05CN10N G IPP05CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary V |
Infineon |
|
IPP05CN10N | N-Channel MOSFET isc N-Channel MOSFET Transistor
IPP05CN10N,IIPP05CN10N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L |
INCHANGE |
|
IPP05CN10NG | Power-Transistor IPB05CN10N G IPI05CN10N G IPP05CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary V |
Infineon |
www.DataSheet.in | 2017 | संपर्क |