डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP04CNE8NG | Power-Transistor www.DataSheet4U.com
IPB04CNE8N G IPP04CNE8N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 ° |
Infineon Technologies |
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IPP04CNE8NG | Power-Transistor | Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |