डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP040N06N | Power-Transistor Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for t |
Infineon Technologies |
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IPP040N06N | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP040N06N,IIPP040N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche te |
INCHANGE |
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IPP040N06N3 | N-Channel MOSFET INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPP040N06N3,IIPP040N06N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t |
INCHANGE |
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IPP040N06N3 | Power Transistor IPP040N06N3G
MOSFET
OptiMOSª3Power-Transistor,60V
Features
•forsync.rectification,drivesanddc/dcSMPS •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-cha |
Infineon |
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IPP040N06N3G | Power-Transistor Type
IPB037N06N3 G
™
IPI040N06N3 G IPP040N06N3 G
OptiMOS 3 Power-Transistor
Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-re |
Infineon Technologies AG |
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IPP040N06NF2S | MOSFET IPP040N06NF2S
MOSFET
StrongIRFETTM2Power-Transistor
Features
•Optimizedforwiderangeofapplications •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Hal |
Infineon |
www.DataSheet.in | 2017 | संपर्क |