डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP037N08N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP037N08N3,IIPP037N08N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.75mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche |
INCHANGE |
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IPP037N08N3 | Power Transistor OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resis |
Infineon |
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IPP037N08N3G | Power-Transistor OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resis |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |