डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPI072N10N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPI072N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤7.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimu |
INCHANGE |
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IPI072N10N3 | Power Transistor IPP072N10N3 G IPI072N10N3 G
OptiMOS®3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary V DS R DS(on |
Infineon |
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IPI072N10N3G | Power Transistor IPP072N10N3 G IPI072N10N3 G
OptiMOS®3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary V DS R DS(on |
Infineon |
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