डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD60R600E6 | MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™E6600V
600VCoolMOS™E6PowerTransistor IPx60R600E6
DataSheet
Rev.2.2 Final
PowerManagement&Multimarket
600V CoolMOS" E6 Power Trans |
Infineon Technologies |
|
IPD60R600E6 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |