डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD60R600CP | Power Transistor IPD60R600CP
CoolMOS® Power Transistor
Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for ta |
Infineon Technologies |
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IPD60R600CP | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |